Products

CSD17552Q3A

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	30 V
Id – Continuous Drain Current:	48 A
Rds On – Drain-Source Resistance:	8.1 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	1.5 V
Qg – Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	2.6 W
Channel Mode:	Enhancement
Tradename:	NexFET
Series:	CSD17552Q3A
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Texas Instruments
Configuration:	Single
Fall Time:	3.4 ns
Forward Transconductance – Min:	106 S
Height:	0.9 mm
Length:	3.15 mm
Product Type:	MOSFET
Rise Time:	7.4 ns
	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	7.2 ns
Width:	3 mm
Unit Weight:	0.000981 oz

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