Products

IRFH5210TRPBF

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PQFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	10 A
Rds On – Drain-Source Resistance:	14.9 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	4 V
Qg – Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	3.6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape

Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	6.5 ns
Forward Transconductance – Min:	66 S
Height:	0.83 mm
Length:	6 mm
Product Type:	MOSFET
Rise Time:	9.7 ns
	4000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	7.2 ns
Width:	5 mm
Unit Weight:	0.004308 oz

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