Products

RHU002N06T106

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	60 V
Id – Continuous Drain Current:	200 mA
Rds On – Drain-Source Resistance:	2.8 Ohms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	2.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	200 mW
Channel Mode:	Enhancement
Series:	RHU002N06
Packaging:	Reel
Packaging:	Cut Tape

Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	8 ns
Height:	0.8 mm
Length:	2 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	8 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	4 ns
Typical Turn-On Delay Time:	15 ns
Width:	1.25 mm
Part # Aliases:	RHU002N06
Unit Weight:	0.000212 oz

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