Products

RU1C001UNTCL

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	20 V
Id – Continuous Drain Current:	100 mA
Rds On – Drain-Source Resistance:	2.5 Ohms
Vgs – Gate-Source Voltage:	- 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage:	300 mV
Qg – Gate Charge:	-
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	150 mW
Channel Mode:	Enhancement
Series:	RU1C001UN
Packaging:	Reel
Packaging:	Cut Tape

Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	38 ns
Forward Transconductance – Min:	180 mS
Product Type:	MOSFET
Rise Time:	4 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	RU1C001UN
Unit Weight:	0.000212 oz

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