Products

STF11N65M2

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	650 V
Id – Continuous Drain Current:	7 A
Rds On – Drain-Source Resistance:	670 mOhms
Vgs – Gate-Source Voltage:	- 25 V, + 25 V
Vgs th – Gate-Source Threshold Voltage:	3 V
Qg – Gate Charge:	12.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh II Plus
Series:	STF11N65M2
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	15 ns
Product:	Power MOSFETs
Product Type:	MOSFET
Rise Time:	7.5 ns
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	0.068784 oz