TPCA8011-H(TE12L,Q

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII-H
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current – Continuous Drain (Id) @ 25掳C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 200碌A
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 5 V
Vgs (Max)	卤12V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 45W (Tc)
Operating Temperature	150掳C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5×5)
Package / Case	8-PowerVDFN
Base Product Number	TPCA8011